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US 12,324,227 B2Granted
Heterojunction bipolar transistor with buried trap rich isolation region
AssigneeGlobalFoundries U.S. Inc.
InventorsVibhor Jain, John J. Ellis-Monaghan, Anthony K. Stamper, Steven M. Shank, John J. Pekarik
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor; a second heterojunction bipolar transistor; and a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor.
Claims19
A structure, comprising:
- a first bipolar heterojunction transistor;
- a second bipolar heterojunction transistor;
- a field effect transistor adjacent to the second bipolar heterojunction transistor;
- shallow trench isolation structures separating the first bipolar heterojunction transistor from the second bipolar heterojunction transistor and the second bipolar heterojunction transistor from the field effect transistor;
- a trap rich isolation region under the first bipolar heterojunction transistor, the second bipolar heterojunction transistor and the field effect transistor, under the shallow trench isolation structures;
- and
- an implanted isolation region extending underneath the trap rich isolation region and the second bipolar heterojunction transistor, and not the first bipolar heterojunction transistor.
4 more elements
A structure comprising:
- a first type of heterojunction bipolar transistor;
- a second type of heterojunction bipolar transistor, different from the first type of heterojunction bipolar transistor;
- a field effect transistor adjacent to the second bipolar heterojunction transistor;
- a trap rich isolation region embedded within a substrate underneath the first heterojunction bipolar transistor, the second heterojunction bipolar transistor and the field effect transistor;
- and
- an implanted isolation region within the substrate, under the trap rich isolation region and the second type of heterojunction bipolar transistor, and not the first bipolar heterojunction transistor.
3 more elements
A method, comprising:
- forming a first bipolar heterojunction transistor;
- forming a second bipolar heterojunction transistor;
- forming a field effect transistor adjacent to the second bipolar heterojunction transistor;
- forming shallow trench isolation structures separating first bipolar heterojunction transistor from the second bipolar heterojunction transistor and the second bipolar heterojunction transistor from the field effect transistor;
- forming a trap rich isolation region under the first bipolar heterojunction transistor, the second bipolar heterojunction transistor and the field effect transistor, under the shallow trench isolation structures;
- and
- forming n implanted isolation region extending underneath the trap rich isolation region and the second bipolar heterojunction transistor, and not the first bipolar heterojunction transistor.
4 more elements
Dependencies are inferred from the claim text.