H10D 8/055
Of transit-time diodes
Official title: {of transit-time diodes, e.g. IMPATT or TRAPATT diodes}
H10D8/055 (Of transit-time diodes) appears on 9 US grants and 3 published applications in this corpus.
Search patents in H10D- Granted patents
- 9
- Published applications
- 3
- Assignees
- 6
- Inventors
- 14
- Latest grant
- 26 Apr 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 2 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Diode devices and methods of forming a diode device26 Apr 2022US 11,316,063 B2Globalfoundries Singapore Pte. Ltd.
- Silicon IMPATT diode16 Oct 2018US 10,103,278 B2Texas Instruments Incorporated
- Integration of a baritt diode20 Dec 2016US 9,525,077 B1Texas Instruments Incorporated
- Integration of the silicon IMPATT diode in an analog technology9 Aug 2016US 9,412,879 B2Texas Instruments Incorporated
- Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures17 Oct 1995US 5,459,107 ACree Research, Inc.
- Diode devices and methods of forming a diode device16 Sep 2021US 2021/0288205 A1Globalfoundries Singapore Pte. Ltd.
- Integration of the silicon impatt diode in an analog technology3 Nov 2016US 2016/0322511 A1Texas Instruments Incorporated
- Integration of the silicon impatt diode in an analog technology22 Jan 2015US 2015/0021740 A1Texas Instruments Incorporated
Most cited
By later US patents
- Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures60US 5,459,107 ACree Research, Inc. · 1995
- Semiconductor device having improved Schottky-barrier junction12US 4,197,551 ARaytheon Company · 1980
- Method of making semiconductor device having improved Schottky-barrier junction7US 4,374,012 ARaytheon Company · 1983
- Buried lateral diode and method for making same4US 4,872,039 AGeneral Electric Company · 1989
- Integration of a baritt diode4US 9,525,077 B1Texas Instruments Incorporated · 2016