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US 9,412,879 B2Granted
Integration of the silicon IMPATT diode in an analog technology
AssigneeTexas Instruments Incorporated
InventorsXiaochuan Bi, Tracey L. Krakowski, Doug Weiser
Life of this patent
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Abstract
A method to integrate a vertical IMPATT diode in a planar process.
Claims8
A vertical impact avalanche transit-time (IMPATT) diode, comprising:
- a p-type layer;
- an n-type buried layer positioned above the p-type layer;
- an n-well having a lower portion positioned above the n-type buried layer and an upper portion positioned above the lower portion;
- an un-doped layer positioned above the n-type buried layer and laterally surrounding the lower portion of the n-well;
- a shallow trench layer positioned above the un-doped layer and laterally surrounding the upper portion of the n-well;
- a sinker layer positioned above the n-type buried layer and laterally surrounding the un-doped layer and the shallow trench layer, the sinker layer coupled to the n-well via the n-type buried layer;
- a breakdown layer formed in the upper portion of the n-well.
4 more elements
Dependencies are inferred from the claim text.