Buried lateral diode and method for making same
AssigneeGeneral Electric Company
InventorPaul J. Stabile
Life of this patent
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Abstract
A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N junction exists where the buried portions meet. Since the junction is buried, surface breakdown effects are greatly reduced. The lateral orientation provides for easier series connection or several such diodes. A method for making a diode in a body comprises forming two laterally adjacent buried portions of respective opposite conductivity type regions. A contact portion of at least one region is formed extending to the surface of the body.
Claims13
An oscillating diode comprises a semiconductor body of a resistivity of at least 2000 ohm-cm and having therein:
- a first region of a first conductivity type;
- means for coupling said first region to the surface of said body;
- a second region of a second conductivity type opposite to said first conductivity type having a contact portion extending to a surface of said body, said first and second regions having a lower resistivity than said body;
- a pair of conducting layers overlying said coupling means and said contact portion, respectively;
- and
- a buried junction comprising a buried portion of said first conductivity type and of said first region and a buried portion of said second conductivity type and of said second region laterally adjacent said buried portion of said first region.
Dependencies are inferred from the claim text.