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US 10,103,278 B2Granted
Silicon IMPATT diode
AssigneeTexas Instruments Incorporated
InventorsXiaochuan Bi, Tracey L. Krakowski, Doug Weiser
Life of this patent
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Abstract
A method to integrate a vertical IMPATT diode in a planar process.
Claims19
An IMPATT diode, comprising:
- a substrate;
- a p-type region and an n-type region that are vertically arranged on the substrate, the n-type region including a lightly doped n-type layer and a heavily doped n-type layer, the p-type region and the lightly doped n-type layer being in contact with each other and forming an IMPATT diode junction;
- a vertical access to the highly doped n-type region;
- an isolation structure disposed between and configured to isolate the vertical access and the p-type region;
- and
- two Ohmic contacts, on a top surface of the IMPATT diode, electrically coupled to the vertical access and the p-type region from the top surface of the IMPATT diode.
3 more elements
A method of making an IMPATT diode, comprising:
- providing a substrate;
- providing a p-type region and an n-type region that are vertically arranged on the substrate, the n-type region including a lightly doped n-type layer and a heavily doped n-type layer, the p-type region and the lightly doped n-type layer being in contact with each other and forming an IMPATT diode junction;
- providing a vertical access to the highly doped n-type region;
- providing an isolation structure disposed between and configured to isolate the vertical access and the p-type region;
- and
- providing two Ohmic contacts, on a top surface of the IMPATT diode, electrically coupled to the vertical access and the p-type region from the top surface of the IMPATT diode.
3 more elements
Dependencies are inferred from the claim text.