Integration of a baritt diode
AssigneeTexas Instruments Incorporated
InventorsXiaochuan Bi, Tracey L Krakowski, Suman Banerjee
Life of this patent
Estimating the term…
Abstract
A vertically oriented BARITT diode is formed in an integrated circuit. The BARITT diode has a source proximate to the top surface of the substrate of the integrated circuit, a drift region immediately below the source in the semiconductor material of the substrate, and a collector in the semiconductor material of the substrate immediately below the drift region. A dielectric isolation structure laterally surrounds the drift region, extending from the source to the collector. The source may optionally include a silicon germanium layer or may optionally include a schottky barrier contact.
Claims20
An integrated circuit, comprising:
- a substrate comprising a semiconductor material having a first conductivity type;
- a transistor of the integrated circuit;
- and
- a barrier injection transit-time (BARITT) diode, comprising:
- a source disposed proximate to a top surface of the substrate;
- a vertically oriented drift region disposed in the semiconductor material immediately below the source, the drift region having the first conductivity type;
- a collector disposed in the substrate immediately below the drift region, the collector having a second, opposite, conductivity type;
- and
- a dielectric isolation structure laterally surrounding the drift region, the dielectric isolation structure extending from the source to the collector, the vertically oriented drift region being free of an external electrical connection other than the source and the collector.
A method of forming an integrated circuit, comprising the steps:
- providing a substrate comprising a semiconductor material having a first conductivity type;
- forming a transistor of the integrated circuit;
- and
- forming a BARITT diode, by a process comprising the steps:
- forming a collector in the substrate, the collector having a second, opposite, conductivity type;
- forming a dielectric isolation structure laterally surrounding a vertically oriented drift region of the BARITT diode in the semiconductor material immediately above the collector, the drift region having the first conductivity type, the dielectric isolation structure extending to the collector;
- and
- forming a source proximate to a top surface of the substrate, the source being immediately above the drift region, the vertically oriented drift region being free of an external electrical connection other than the source and the collector.
Dependencies are inferred from the claim text.