H10D 62/402
Amorphous materials
Official title: {Amorphous materials}
H10D62/402 (Amorphous materials) appears on 541 US grants and 593 published applications in this corpus.
Search patents in H10D- Granted patents
- 541
- Published applications
- 593
- Assignees
- 172
- Inventors
- 923
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 2 |
| 2003 | 0 | 3 |
| 2004 | 1 | 4 |
| 2005 | 3 | 2 |
| 2006 | 3 | 2 |
| 2007 | 0 | 3 |
| 2008 | 1 | 1 |
| 2009 | 3 | 4 |
| 2010 | 3 | 14 |
| 2011 | 1 | 19 |
| 2012 | 6 | 18 |
| 2013 | 16 | 30 |
| 2014 | 46 | 42 |
| 2015 | 49 | 56 |
| 2016 | 43 | 67 |
| 2017 | 61 | 58 |
| 2018 | 41 | 35 |
| 2019 | 36 | 50 |
| 2020 | 37 | 42 |
| 2021 | 43 | 43 |
| 2022 | 25 | 22 |
| 2023 | 27 | 31 |
| 2024 | 27 | 17 |
| 2025 | 17 | 20 |
| 2026 | 8 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ultra-scaled transistor devices to enable cell size scaling15 Sep 2026US 12,740,115 B2Intel Corporation
- Oxide semiconductor film and semiconductor device21 Jul 2026US 12,690,237 B2Semiconductor Energy Laboratory Co.Ltd.
- Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor23 Jun 2026US 12,666,655 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Liquid crystal display device16 Jun 2026US 12,658,150 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device structure with reduced critical dimension and method for preparing the same2 Jun 2026US 12,648,423 B2Nanya Technology Corporation
- Semiconductor/dielectric interface engineering for iii-n transistors10 Sep 2026US 2026/0271325 A1Intel Corporation
- Semiconductor device6 Aug 2026US 2026/0229269 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and method of manufacturing the same25 Jun 2026US 2026/0181984 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with a fin-shaped active region and a gate electrode14 May 2026US 2026/0136584 A1Samsung Electronics Co., Ltd.
- Composite oxide semiconductor and transistor26 Mar 2026US 2026/0090030 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Metal oxynitride semiconductor containing zinc357US 8,274,078 B2Canon Kabushiki Kaisha · 2012
- Electrically reprogrammable nonvolatile memory device296US 5,315,131 AMatsushita Electric Industrial Co., Ltd. · 1994
- Semiconductor device having a semiconductor region in which a band gap being continuously graded273US 5,093,704 ACanon Kabushiki Kaisha · 1992
- Liquid crystal display device234US 7,859,510 B2Semiconductor Energy Laboratory Co.Ltd. · 2010