Metal oxynitride semiconductor containing zinc
AssigneeCanon Kabushiki Kaisha
InventorsNaho Itagaki, Tatsuya Iwasaki, Masatoshi Watanabe, Toru Den
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Abstract
Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and In and at least one element selected from the group consisting of Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.
Claims5
An oxynitride semiconductor comprising a metal oxynitride, wherein the metal of the metal oxynitride consists essentially of Zn and In, and wherein the metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less, and wherein the metal oxynitride is a crystal having an atomic arrangement of a wurtzite structure.
Dependencies are inferred from the claim text.