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US 5,315,131 AGranted
Electrically reprogrammable nonvolatile memory device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYoshio Kishimoto, Masaaki Suzuki
Life of this patent
Estimating the term…
Abstract
An electrically plastic device comprising an amorphous silicon semiconductor layer including movable dopant formed between a pair of electrodes and; at least one gate electrode formed on said amorphous silicon semiconductor layer through an insulation layer or a high resistance layer; whereby the operation of said gate electrode controls the dopant distribution of said amorphous semiconductor layer, thereby varying the electrical conductivity thereof.
Claims12
An electrically plastic device comprising:
- a pair of electrodes;
- an amorphous silicon semiconductor layer comprising a movable dopant support layer for imparting the electronic conductivity of said amorphous silicon semiconductor layer, said amorphous silicon semiconductor layer formed between said pair of electrodes;
- said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on .beta.-aluminum oxide, a redox ion conductor including Ag.sup.+ or Cu.sup.+, and a porous ceramic;
- an insulating layer formed on said amorphous silicon semiconductor layer;
- and
- at least one gate electrode formed on said insulating layer for applying an electric field to control the dopant distribution of said amorphous semiconductor layer;
- whereby the electronic conductivity of said amorphous semiconductor layer is variable by controlling the dopant distribution of said amorphous semiconductor layer.
4 more elements
An electrically plastic device comprising:
- an ion conductive substrate comprising a movable dopant support layer;
- said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on .beta.-aluminum oxide, a redox ion conductor including Ag.sup.+ or Cu.sup.+, and a porous ceramic;
- a pair of electrodes formed on said ion conductive substrate;
- an amorphous silicon semiconductor layer formed on said ion conductive substrate so as to contact said pair of electrodes;
- an insulating layer formed on said amorphous silicon semiconductor layer and between said pair of electrodes;
- and
- at least one gate electrode formed on said insulating layer for applying an electric field to control the flow of ions between said ion conductive substrate and said amorphous silicon semiconductor layer;
- whereby the resistance of said amorphous silicon semiconductor layer is variable by controlling the ion content of said amorphous silicon semiconductor layer.
5 more elements
An electrically plastic device comprising:
- a substrate;
- a movable dopant supporting layer formed on said substrate;
- said movable dopant support layer comprising at least one element selected from the group consisting of an alkali ion conductor based on .beta.-aluminum oxide, a redox ion conductor including Ag.sup.+ or Cu.sup.+, and a porous ceramic;
- an amorphous silicon semiconductor layer formed on said movable dopant layer;
- a pair of electrodes formed on said amorphous silicon semiconductor layer;
- an insulating layer formed on said amorphous silicon semiconductor layer and between said pair of electrodes;
- and
- at least one gate electrode formed on said insulating layer for applying an electric field to control the flow of ions between said movable dopant supporting layer and said amorphous silicon semiconductor layer;
- whereby the resistance of said amorphous silicon semiconductor layer is variable by controlling the ion content of said amorphous silicon semiconductor layer.
6 more elements
Dependencies are inferred from the claim text.