H10D 62/127
Of cellular field-effect devices
Official title: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
H10D62/127 (Of cellular field-effect devices) appears on 5,164 US grants and 6,086 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,164
- Published applications
- 6,086
- Assignees
- 610
- Inventors
- 4,899
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 5 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 13 | 0 |
| 1988 | 9 | 0 |
| 1989 | 7 | 0 |
| 1990 | 17 | 0 |
| 1991 | 14 | 0 |
| 1992 | 21 | 0 |
| 1993 | 13 | 0 |
| 1994 | 21 | 0 |
| 1995 | 33 | 0 |
| 1996 | 27 | 0 |
| 1997 | 21 | 0 |
| 1998 | 40 | 0 |
| 1999 | 42 | 0 |
| 2000 | 51 | 0 |
| 2001 | 35 | 26 |
| 2002 | 54 | 56 |
| 2003 | 51 | 59 |
| 2004 | 73 | 83 |
| 2005 | 72 | 93 |
| 2006 | 64 | 100 |
| 2007 | 61 | 122 |
| 2008 | 65 | 142 |
| 2009 | 83 | 145 |
| 2010 | 143 | 172 |
| 2011 | 158 | 178 |
| 2012 | 145 | 198 |
| 2013 | 215 | 217 |
| 2014 | 238 | 240 |
| 2015 | 261 | 307 |
| 2016 | 284 | 342 |
| 2017 | 310 | 318 |
| 2018 | 294 | 345 |
| 2019 | 343 | 380 |
| 2020 | 337 | 377 |
| 2021 | 298 | 303 |
| 2022 | 260 | 382 |
| 2023 | 250 | 394 |
| 2024 | 222 | 417 |
| 2025 | 282 | 417 |
| 2026 | 213 | 273 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Silicon carbide semiconductor device and power conversion apparatus29 Sep 2026US 12,751,068 B2Mitsubishi Electric Corporation
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Three-dimensional nonvolatile memory device including a plurality of memory cells8 Sep 2026US 12,733,163 B2Samsung Electronics Co., Ltd.
- Breakdown voltage improvement in vertical trench-gate devices1 Oct 2026US 2026/0304833 A1Semiconductor Components Industries, LLC
- Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator1 Oct 2026US 2026/0304858 A1Kabushiki Kaisha Toshiba
- Superjunction transistor device and method1 Oct 2026US 2026/0304860 A1Infineon Technologies Austria AG
- Field effect transistor1 Oct 2026US 2026/0304861 A1Denso Corporation
- Scalable circuit-under-pad device topologies for lateral gan power transistors1 Oct 2026US 2026/0304868 A1GaN Systems Inc.
Most cited
By later US patents
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry288US 5,072,266 ASiliconix Incorporated · 1991
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008