H10D 62/126
Top-view geometrical layouts of the regions or the junctions
Official title: {Top-view geometrical layouts of the regions or the junctions}
H10D62/126 (Top-view geometrical layouts of the regions or the junctions) appears on 7,823 US grants and 9,143 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,823
- Published applications
- 9,143
- Assignees
- 965
- Inventors
- 8,317
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 6 | 0 |
| 1980 | 3 | 0 |
| 1981 | 6 | 0 |
| 1982 | 4 | 0 |
| 1983 | 7 | 0 |
| 1984 | 1 | 0 |
| 1985 | 5 | 0 |
| 1986 | 7 | 0 |
| 1987 | 19 | 0 |
| 1988 | 13 | 0 |
| 1989 | 13 | 0 |
| 1990 | 22 | 0 |
| 1991 | 30 | 0 |
| 1992 | 30 | 0 |
| 1993 | 17 | 0 |
| 1994 | 35 | 0 |
| 1995 | 44 | 0 |
| 1996 | 38 | 0 |
| 1997 | 37 | 0 |
| 1998 | 57 | 0 |
| 1999 | 55 | 0 |
| 2000 | 66 | 0 |
| 2001 | 49 | 31 |
| 2002 | 68 | 80 |
| 2003 | 77 | 99 |
| 2004 | 110 | 115 |
| 2005 | 104 | 158 |
| 2006 | 104 | 173 |
| 2007 | 97 | 193 |
| 2008 | 100 | 226 |
| 2009 | 137 | 216 |
| 2010 | 214 | 264 |
| 2011 | 229 | 264 |
| 2012 | 223 | 296 |
| 2013 | 323 | 364 |
| 2014 | 375 | 405 |
| 2015 | 444 | 491 |
| 2016 | 461 | 541 |
| 2017 | 499 | 489 |
| 2018 | 440 | 484 |
| 2019 | 512 | 549 |
| 2020 | 491 | 553 |
| 2021 | 430 | 446 |
| 2022 | 396 | 554 |
| 2023 | 366 | 594 |
| 2024 | 348 | 574 |
| 2025 | 417 | 576 |
| 2026 | 281 | 408 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High voltage device structure and methods of forming the same6 Oct 2026US 12,757,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Fully-isolated MOS device6 Oct 2026US 12,757,450 B2United Microelectronics Corp.
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Monolithic field-effect transistor-antenna device for terahertz wave detection with independent performance parameters29 Sep 2026US 12,751,037 B2Unist (Ulsan National Institute of Science and Technology)
- High voltage device structure and methods of forming the same8 Oct 2026US 2026/0313953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Merged-height cell semiconductor device structure and methods of forming same1 Oct 2026US 2026/0300603 A1Samsung Electronics Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304806 A1Renesas Electronics Corporation
- Semiconductor device1 Oct 2026US 2026/0304828 A1Rohm Co., Ltd.
- Breakdown voltage improvement in vertical trench-gate devices1 Oct 2026US 2026/0304833 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry288US 5,072,266 ASiliconix Incorporated · 1991
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008