H10D 62/124
Shapes, relative sizes or dispositions of the regions of semiconductor bodies or
Official title: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions}
H10D62/124 (Shapes, relative sizes or dispositions of the regions of semiconductor bodies or) appears on 8,801 US grants and 10,356 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,801
- Published applications
- 10,356
- Assignees
- 1,096
- Inventors
- 9,731
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 8 | 0 |
| 1978 | 11 | 0 |
| 1979 | 10 | 0 |
| 1980 | 6 | 0 |
| 1981 | 8 | 0 |
| 1982 | 5 | 0 |
| 1983 | 7 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 10 | 0 |
| 1987 | 24 | 0 |
| 1988 | 13 | 0 |
| 1989 | 17 | 0 |
| 1990 | 25 | 0 |
| 1991 | 32 | 0 |
| 1992 | 33 | 0 |
| 1993 | 17 | 0 |
| 1994 | 36 | 0 |
| 1995 | 45 | 0 |
| 1996 | 38 | 0 |
| 1997 | 38 | 0 |
| 1998 | 58 | 0 |
| 1999 | 55 | 0 |
| 2000 | 66 | 0 |
| 2001 | 50 | 31 |
| 2002 | 68 | 81 |
| 2003 | 78 | 100 |
| 2004 | 113 | 124 |
| 2005 | 106 | 162 |
| 2006 | 106 | 174 |
| 2007 | 99 | 198 |
| 2008 | 101 | 231 |
| 2009 | 140 | 223 |
| 2010 | 220 | 274 |
| 2011 | 233 | 270 |
| 2012 | 235 | 318 |
| 2013 | 339 | 398 |
| 2014 | 412 | 475 |
| 2015 | 503 | 589 |
| 2016 | 548 | 661 |
| 2017 | 654 | 606 |
| 2018 | 569 | 585 |
| 2019 | 630 | 615 |
| 2020 | 568 | 610 |
| 2021 | 469 | 498 |
| 2022 | 441 | 609 |
| 2023 | 402 | 632 |
| 2024 | 378 | 626 |
| 2025 | 441 | 707 |
| 2026 | 315 | 559 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High voltage device structure and methods of forming the same6 Oct 2026US 12,757,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Fully-isolated MOS device6 Oct 2026US 12,757,450 B2United Microelectronics Corp.
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- High voltage device structure and methods of forming the same8 Oct 2026US 2026/0313953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Planar mosfet having asymmetric wells8 Oct 2026US 2026/0313954 A1Microchip Technology Incorporated
- Nitride semiconductor device8 Oct 2026US 2026/0314016 A1Rohm Co., Ltd.
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry288US 5,072,266 ASiliconix Incorporated · 1991