H10D 30/6755
Oxide semiconductors
Official title: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
H10D30/6755 (Oxide semiconductors) appears on 8,624 US grants and 11,253 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,624
- Published applications
- 11,253
- Assignees
- 680
- Inventors
- 7,172
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 2 |
| 2003 | 2 | 5 |
| 2004 | 1 | 9 |
| 2005 | 5 | 26 |
| 2006 | 14 | 59 |
| 2007 | 19 | 51 |
| 2008 | 32 | 107 |
| 2009 | 29 | 135 |
| 2010 | 65 | 297 |
| 2011 | 127 | 431 |
| 2012 | 205 | 416 |
| 2013 | 344 | 546 |
| 2014 | 514 | 671 |
| 2015 | 661 | 923 |
| 2016 | 763 | 915 |
| 2017 | 853 | 856 |
| 2018 | 719 | 675 |
| 2019 | 722 | 584 |
| 2020 | 558 | 697 |
| 2021 | 491 | 693 |
| 2022 | 504 | 695 |
| 2023 | 484 | 749 |
| 2024 | 586 | 675 |
| 2025 | 596 | 627 |
| 2026 | 321 | 409 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Biosensor based on metal oxide thin film transistor and manufacturing method for the same6 Oct 2026US 12,754,162 B2Ajou University Industry-Academic Cooperation Foundation
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Electrostatic discharge circuit, display substrate, and display device6 Oct 2026US 12,756,181 B2Boe Technology Group Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,446 B2Idemitsu Kosan Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Metal oxide film, semiconductor device, and manufacturing method thereof8 Oct 2026US 2026/0313909 A1
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including conductive layers and cell capacitor8 Oct 2026US 2026/0313961 A1Samsung Electronics Co., Ltd.
- Source/drain channel interface with nitrogen-containing oxide8 Oct 2026US 2026/0313973 A1Zinite Corporation
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device4,046US 7,297,977 B2Hewlett-Packard Development Company, L. P. · 2007
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004