H10D 18/655
Produced by insulated gate structures
Official title: {produced by insulated gate structures}
H10D18/655 (Produced by insulated gate structures) appears on 350 US grants and 146 published applications in this corpus.
Search patents in H10D- Granted patents
- 350
- Published applications
- 146
- Assignees
- 97
- Inventors
- 328
- Latest grant
- 17 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 9 | 0 |
| 1989 | 8 | 0 |
| 1990 | 11 | 0 |
| 1991 | 7 | 0 |
| 1992 | 13 | 0 |
| 1993 | 12 | 0 |
| 1994 | 30 | 0 |
| 1995 | 26 | 0 |
| 1996 | 17 | 0 |
| 1997 | 17 | 0 |
| 1998 | 21 | 0 |
| 1999 | 12 | 0 |
| 2000 | 7 | 0 |
| 2001 | 9 | 6 |
| 2002 | 7 | 1 |
| 2003 | 5 | 7 |
| 2004 | 6 | 5 |
| 2005 | 7 | 4 |
| 2006 | 5 | 1 |
| 2007 | 2 | 4 |
| 2008 | 0 | 3 |
| 2009 | 4 | 3 |
| 2010 | 4 | 5 |
| 2011 | 3 | 3 |
| 2012 | 5 | 5 |
| 2013 | 8 | 6 |
| 2014 | 4 | 9 |
| 2015 | 6 | 7 |
| 2016 | 9 | 7 |
| 2017 | 7 | 8 |
| 2018 | 5 | 9 |
| 2019 | 9 | 16 |
| 2020 | 11 | 5 |
| 2021 | 7 | 7 |
| 2022 | 5 | 11 |
| 2023 | 7 | 3 |
| 2024 | 6 | 3 |
| 2025 | 3 | 8 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Compositions and methods for marking hydrocarbon compositions with non-mutagenic dyes17 Mar 2026US 12,577,484 B2United Color Manufacturing, Inc.
- Insulated gate turn-off device with short channel PMOS transistor3 Mar 2026US 12,568,666 B2Pakal Technologies, Inc.
- Semiconductor device21 Oct 2025US 12,453,109 B2Silanna UV Technologies Pte Ltd
- Gate tunnel current-triggered semiconductor controlled rectifier8 Jul 2025US 12,356,644 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device18 Mar 2025US 12,255,258 B1Silanna UV Technologies Pte Ltd
- Bipolar junction device, and methods and switch assemblies using same25 Dec 2025US 2025/0392305 A1Ideal Power Inc.
- Insulated turn-off device with reduced sensitivity to variations in trench depth25 Sep 2025US 2025/0301677 A1Pakal Technologies, Inc.
- Semiconductor device11 Sep 2025US 2025/0287622 A1Silanna UV Technologies Pte Ltd
- Mos-gated trench device having shallow gate trenches and deep isolation trenches12 Jun 2025US 2025/0194134 A1Pakal Technologies, Inc.
- Semiconductor device27 Mar 2025US 2025/0107120 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Method of maintaining the state of semiconductor memory having electrically floating body transistor208US 8,208,302 B2Zeno Semiconductor, Inc. · 2012
- Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor168US 5,413,313 AFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. · 1995
- Method of maintaining the state of semiconductor memory having electrically floating body transistor140US 8,937,834 B2Zeno Semiconductor, Inc. · 2015