H10B 63/82
The switching components having a common active material layer
Official title: {the switching components having a common active material layer}
H10B63/82 (The switching components having a common active material layer) appears on 642 US grants and 723 published applications in this corpus.
Search patents in H10B- Granted patents
- 642
- Published applications
- 723
- Assignees
- 164
- Inventors
- 971
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 7 |
| 2003 | 10 | 10 |
| 2004 | 8 | 11 |
| 2005 | 9 | 19 |
| 2006 | 9 | 19 |
| 2007 | 13 | 27 |
| 2008 | 13 | 45 |
| 2009 | 25 | 26 |
| 2010 | 32 | 44 |
| 2011 | 32 | 45 |
| 2012 | 28 | 64 |
| 2013 | 67 | 76 |
| 2014 | 73 | 51 |
| 2015 | 49 | 35 |
| 2016 | 40 | 19 |
| 2017 | 30 | 27 |
| 2018 | 22 | 23 |
| 2019 | 28 | 26 |
| 2020 | 23 | 28 |
| 2021 | 27 | 29 |
| 2022 | 23 | 20 |
| 2023 | 21 | 23 |
| 2024 | 14 | 25 |
| 2025 | 22 | 17 |
| 2026 | 10 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Scaled one transistor two resistor (1T 2R) memory8 Sep 2026US 12,733,178 B2International Business Machines Corporation
- Electronic computing device for generating Boolean functions and conductive module thereof25 Aug 2026US 12,719,477 B2Universita' Degli Studi Di Milano
- Integrated circuit device and electronic system including the same28 Jul 2026US 12,696,461 B2Samsung Electronics Co., Ltd.
- Resistive switching memory having confined filament formation and methods thereof30 Jun 2026US 12,672,489 B1Crossbar, Inc.
- Resistive switching memory device including dual active layer and array including the same12 May 2026US 12,628,575 B2Research & Business Foundation Sungkyunkwan University
- Variable resistance memory device20 Aug 2026US 2026/0247629 A1Samsung Electronics Co., Ltd.
- Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device25 Jun 2026US 2026/0181912 A1Samsung Electronics Co., Ltd.
- Semiconductor device including resistive memory cell and cell control transistor connected to resistive memory cell11 Jun 2026US 2026/0164674 A1SK hynix Inc.
- Rram structure and method of fabricating the same2 Apr 2026US 2026/0096356 A1United Microelectronics Corp.
- Threshold switching volatile memristor and oscillatory circuit using same26 Feb 2026US 2026/0060010 A1National Cheng Kung University
Most cited
By later US patents
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Single level metal memory cell using chalcogenide cladding387US 6,567,293 B1Ovonyx, Inc. · 2003
- Memory structures and methods of making same269US 6,072,716 AMassachusetts Institute of Technology · 2000
- Method of forming a contact structure in a semiconductor device265US 6,440,837 B1Micron Technology, Inc. · 2002
- Electrically programmable memory element with multi-regioned contact247US 6,617,192 B1Ovonyx, Inc. · 2003