Threshold switching volatile memristor and oscillatory circuit using same

An oscillatory circuit, comprising:

• an input end, connected in series to a first resistor, and providing an input voltage;
• a ground end;
• a threshold switching volatile memristor, connected to the first resistor;
• a second resistor, connected in series to the threshold switching volatile memristor, and connected to the ground end;
• a capacitor, connected in parallel to the threshold switching volatile memristor and the second resistor, and connected to the first resistor and the ground end;
• a first output end between the first resistor and the threshold switching volatile memristor, and outputting a first output voltage;
• and
• a second output end between the threshold switching volatile memristor and the second resistor, and outputting a second output voltage, wherein,
• the threshold switching volatile memristor comprises a first metal layer, an active layer, a matching metal layer, and a second metal layer, the active layer is on the first metal layer and is made of niobium oxide (NbOx), the matching metal layer is on the active layer and is made of niobium (Nb), the second metal layer is on the matching metal layer, a thickness ratio of the active layer to the matching metal layer is 2 to 3.5, and a thickness of the matching metal layer is less than 40 nanometers, wherein the threshold switching volatile memristor has a negative differential resistance characteristic, and when a current is applied to the threshold switching volatile memristor, a voltage-current curve of the threshold switching volatile memristor reverses after a voltage reaches a threshold voltage.