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US 6,617,192 B1Granted
Electrically programmable memory element with multi-regioned contact
AssigneeOvonyx, Inc.
InventorsTyler Lowrey, Stephen J. Hudgens, Patrick J. Klersy
Life of this patent
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Abstract
An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
Claims11
A method of making an electrically programmable memory element, comprising the steps of:
- providing a contact material;
- altering the resistivity of a portion of said contact material so that said contact material includes at least a first region having a first resistivity and a second region having a second resistivity greater than said first resistivity;
- and
- introducing a memory material in electrical communication with said contact material, said second region being proximate to said memory material, said first region being distant from said memory material.
1 more element
Dependencies are inferred from the claim text.