H10B 20/367
Gate dielectric programmed
Official title: {Gate dielectric programmed, e.g. different thickness}
H10B20/367 (Gate dielectric programmed) appears on 54 US grants and 37 published applications in this corpus.
Search patents in H10B- Granted patents
- 54
- Published applications
- 37
- Assignees
- 30
- Inventors
- 79
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 6 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 0 |
| 2003 | 2 | 1 |
| 2004 | 3 | 5 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 2 |
| 2008 | 0 | 0 |
| 2009 | 1 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 3 |
| 2014 | 0 | 0 |
| 2015 | 2 | 1 |
| 2016 | 1 | 1 |
| 2017 | 2 | 5 |
| 2018 | 2 | 1 |
| 2019 | 2 | 0 |
| 2020 | 1 | 4 |
| 2021 | 4 | 4 |
| 2022 | 1 | 2 |
| 2023 | 2 | 2 |
| 2024 | 2 | 2 |
| 2025 | 2 | 1 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power device with low gate charge and low figure of merit18 Aug 2026US 12,713,646 B2Infineon Technologies Americas Corp.
- High writing rate antifuse array10 Jun 2025US 12,328,871 B2Yield Microelectronics Corp.
- Semiconductor memory devices with different doping types18 Feb 2025US 12,230,681 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Read only memory13 Aug 2024US 12,063,775 B2STMicroelectronics (Crolles 2) SAS
- Semiconductor device and method of controlling the same5 Mar 2024US 11,925,025 B2Renesas Electronics Corporation
- Memory devices programmed with dielectric structures and methods for manufacturing the same26 Feb 2026US 2026/0059745 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High-Isolation P-Substrate on RF PMOS12 Feb 2026US 2026/0047086 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory devices with different doping types22 May 2025US 2025/0169142 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory devices with different doping types14 Mar 2024US 2024/0090210 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Read only memory1 Feb 2024US 2024/0040781 A1STMicroelectronics (Crolles 2) SAS
Most cited
By later US patents
- Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric124US 6,667,902 B2Kilopass Technologies, Inc. · 2003
- Multi-stage ROM structure and method for fabricating the same60US 5,864,164 AUnited Microelectronics Corp. · 1999
- Trench-shaped read-only memory and its method of fabrication59US 5,831,314 AUnited Microelectronics Corp. · 1998
- High density N-channel silicon gate read only memory52US 4,151,020 ATexas Instruments Incorporated · 1979
- Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric47US 6,798,693 B2Kilopass Technologies, Inc. · 2004