H10B 10/10
Sram devices comprising bipolar components
Official title: SRAM devices comprising bipolar components
H10B10/10 (Sram devices comprising bipolar components) appears on 205 US grants and 110 published applications in this corpus.
Search patents in H10B- Granted patents
- 205
- Published applications
- 110
- Assignees
- 51
- Inventors
- 200
- Latest grant
- 30 Jan 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 4 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 7 | 0 |
| 1981 | 5 | 0 |
| 1982 | 6 | 0 |
| 1983 | 8 | 0 |
| 1984 | 5 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 8 | 0 |
| 1988 | 1 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 4 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 0 |
| 2002 | 2 | 3 |
| 2003 | 2 | 0 |
| 2004 | 2 | 2 |
| 2005 | 3 | 2 |
| 2006 | 1 | 2 |
| 2007 | 2 | 3 |
| 2008 | 4 | 4 |
| 2009 | 1 | 1 |
| 2010 | 3 | 31 |
| 2011 | 2 | 1 |
| 2012 | 7 | 3 |
| 2013 | 14 | 13 |
| 2014 | 24 | 4 |
| 2015 | 5 | 1 |
| 2016 | 6 | 12 |
| 2017 | 10 | 11 |
| 2018 | 9 | 6 |
| 2019 | 6 | 3 |
| 2020 | 6 | 4 |
| 2021 | 2 | 2 |
| 2022 | 1 | 0 |
| 2023 | 1 | 0 |
| 2024 | 1 | 1 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Interconnect landing method for RRAM technology30 Jan 2024US 11,889,705 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory device21 Mar 2023US 11,610,905 B2Kioxia Corporation
- High density vertical thyristor memory cell array with improved isolation22 Mar 2022US 11,282,840 B2Kilopass Technology, Inc.
- Interconnect landing method for RRAM technology17 Aug 2021US 11,094,744 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect landing method for RRAM technology26 Jan 2021US 10,903,274 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory architectures with backside metal zero (bm0) bit-lines25 Jun 2026US 2026/0181849 A1Intel Corporation
- Semiconductor device1 Feb 2024US 2024/0038634 A1Samsung Electronics Co., Ltd.
- Interconnect landing method for rram technology25 Nov 2021US 2021/0366988 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory device4 Mar 2021US 2021/0066325 A1Kioxia Corporation
- Semiconductor Chip Including Integrated Circuit Having Cross-Coupled Transistor Configuration and Method for Manufacturing the Same17 Sep 2020US 2020/0295044 A1Tela Innovations, Inc.
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Semiconductor bonding and layer transfer method262US 7,718,508 B22010
- 3D integrated circuit device fabrication with precisely controllable substrate removal253US 8,129,256 B2International Business Machines Corporation · 2012
- Cross-coupled transistor layouts in restricted gate level layout architecture127US 7,956,421 B2Tela Innovations, Inc. · 2011
- Semiconductor memory device102US 4,677,455 AFujitsu Limited · 1987