H01S 5/16
Window-type lasers, i.e. with a region of non-absorbing material between the active
Official title: Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence)
H01S5/16 (Window-type lasers, i.e. with a region of non-absorbing material between the active) appears on 524 US grants and 416 published applications in this corpus.
Search patents in H01S- Granted patents
- 524
- Published applications
- 416
- Assignees
- 174
- Inventors
- 945
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 8 | 0 |
| 1986 | 6 | 0 |
| 1987 | 8 | 0 |
| 1988 | 21 | 0 |
| 1989 | 26 | 0 |
| 1990 | 12 | 0 |
| 1991 | 10 | 0 |
| 1992 | 14 | 0 |
| 1993 | 11 | 0 |
| 1994 | 7 | 0 |
| 1995 | 8 | 0 |
| 1996 | 13 | 0 |
| 1997 | 8 | 0 |
| 1998 | 16 | 0 |
| 1999 | 8 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 7 |
| 2002 | 7 | 30 |
| 2003 | 21 | 28 |
| 2004 | 21 | 25 |
| 2005 | 22 | 25 |
| 2006 | 18 | 25 |
| 2007 | 13 | 26 |
| 2008 | 12 | 21 |
| 2009 | 23 | 22 |
| 2010 | 31 | 23 |
| 2011 | 6 | 15 |
| 2012 | 12 | 19 |
| 2013 | 22 | 8 |
| 2014 | 13 | 12 |
| 2015 | 10 | 11 |
| 2016 | 8 | 8 |
| 2017 | 11 | 10 |
| 2018 | 12 | 6 |
| 2019 | 5 | 9 |
| 2020 | 5 | 13 |
| 2021 | 9 | 12 |
| 2022 | 7 | 15 |
| 2023 | 8 | 14 |
| 2024 | 9 | 21 |
| 2025 | 13 | 6 |
| 2026 | 6 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H01S 5/162With window regions made by diffusion or disordening of the active layer145
- H01S 5/164With window regions comprising semiconductor material with a wider bandgap than the144
- H01S 5/168With window regions comprising current blocking layers100
- H01S 5/166With window regions comprising non-semiconducting materials16
Recent patents
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- Edge-emitting semiconductor laser, method of manufacturing a plurality of edge-emitting semiconductor lasers, laser component and method of manufacturing a laser component23 Jul 2026US 2026/0213496 A1ams-OSRAM International GmbH
- Optically pumped semiconductor laser using gallium and nitrogen containing diode laser source and module11 Jun 2026US 2026/0163329 A1KYOCERA Corporation
- Semiconductor light-emitting element and method of manufacturing the same12 Feb 2026US 2026/0045772 A1Nuvoton Technology Corporation Japan
- Refractive index engineering for brightness enhancement and kink suppression in optical emitting devices5 Feb 2026US 2026/0039088 A1II-Vi Delaware, Inc.
Most cited
By later US patents
- Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output120US 4,720,835 AKokusai Denshin Denwa Kabushiki Kaisha · 1988
- Semiconductor laser with integrated optical elements97US 4,815,084 ASpectra Diode Laboratories, Inc. · 1989
- Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam91US 6,052,397 ASDL, Inc. · 2000
- Differentially pumped optical amplifer and mopa device79US 5,539,571 ASDL, Inc. · 1996
- Method of forming a tapered section in a semiconductor device to provide for reproducible mode profile of the output beam65US 6,174,748 B1SDL, Inc. · 2001