H01S 5/164
With window regions comprising semiconductor material with a wider bandgap than the
Official title: {with window regions comprising semiconductor material with a wider bandgap than the active layer}
H01S5/164 (With window regions comprising semiconductor material with a wider bandgap than the) appears on 144 US grants and 80 published applications in this corpus.
Search patents in H01S- Granted patents
- 144
- Published applications
- 80
- Assignees
- 62
- Inventors
- 257
- Latest grant
- 13 May 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 8 | 0 |
| 1989 | 11 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 8 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 4 |
| 2002 | 1 | 11 |
| 2003 | 9 | 8 |
| 2004 | 9 | 6 |
| 2005 | 5 | 6 |
| 2006 | 5 | 1 |
| 2007 | 1 | 2 |
| 2008 | 3 | 5 |
| 2009 | 2 | 1 |
| 2010 | 1 | 4 |
| 2011 | 1 | 3 |
| 2012 | 3 | 3 |
| 2013 | 6 | 1 |
| 2014 | 2 | 2 |
| 2015 | 2 | 2 |
| 2016 | 3 | 1 |
| 2017 | 0 | 1 |
| 2018 | 2 | 3 |
| 2019 | 1 | 0 |
| 2020 | 1 | 2 |
| 2021 | 1 | 0 |
| 2022 | 0 | 6 |
| 2023 | 3 | 1 |
| 2024 | 1 | 4 |
| 2025 | 4 | 2 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output120US 4,720,835 AKokusai Denshin Denwa Kabushiki Kaisha · 1988
- Semiconductor laser with integrated optical elements97US 4,815,084 ASpectra Diode Laboratories, Inc. · 1989
- Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam91US 6,052,397 ASDL, Inc. · 2000
- Method of forming a tapered section in a semiconductor device to provide for reproducible mode profile of the output beam65US 6,174,748 B1SDL, Inc. · 2001
- Semiconductor laser and method of making the same57US 6,067,310 ASumitomo Electric Industries, Ltd. · 2000