Method of forming a tapered section in a semiconductor device to provide for reproducible mode profile of the output beam
AssigneeSDL, Inc.
InventorsHeonsu Jeon, Jean-Marc Verdiell
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Abstract
A method for fabricating a high power laser diode device with an output emission with a nearly circular mode profile for efficient coupling into an optical fiber. A vertical taper waveguide and a window tolerance region are formed in a base structure of the device employing successive etching steps. Further regrowth completes the device structure. The resultant laser device has a vertical and lateral tapered waveguide that adiabatically transforms the highly elliptical mode profile in an active gain section of the device into a substantially circular mode profile in a passive waveguide section of the device.
Claims26
A method of fabricating a laser diode device, comprising the steps of:
- forming a base structure comprising a plurality of semiconductor layers having a waveguide region that includes an active waveguide layer;
- performing a first etching on the base structure forming a vertical taper contour along the base structure including a portion of the active waveguide layer;
- and
- performing a second etching producing a planar waveguide region with a flat portion adjacent to the formed vertical taper of the first performed etching, the planar region providing a window region of a length within which a cleave can be performed to form a facet upon further completion of the device.
Dependencies are inferred from the claim text.