Semiconductor laser and semiconductor laser device

A semiconductor laser comprising:

• a semiconductor substrate;
• a semiconductor structure part that is formed on a surface of the semiconductor substrate and includes an active layer for generating light emitted from an emission facet;
• a surface electrode formed on a surface of the semiconductor structure part opposite to the semiconductor substrate;
• and
• a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate, wherein
• the conductive member is such that part of or the whole of a side face thereof on an emission facet side, the side face being one side face in an x-direction parallel to an extending direction in which the active layer extends, is formed to be away from the emission facet in the semiconductor structure part toward a side of the other facet opposed to the emission facet in the x-direction,
• part of or the whole of a side face thereof on the side of the other facet in the x-direction is formed toward the emission facet side,
• a receding portion is formed on the emission facet side of the conductive member such that at least part of the conductive member recedes toward the side of the other facet in the x-direction from the emission facet, and
• a receding portion is formed on the side of the other side face of the conductive member in the x-direction such that at least part of the conductive member recedes toward the emission facet side from the other facet in the x-direction,
• the conductive member comprises:
• a main part;
• and
• an extended part extending in the x-direction and at least partly in a y-direction on a side of the surface electrode in two side faces opposed to each other in the x-direction in the main part, the y-direction being perpendicular to the x-direction and a z-direction, the z-direction being perpendicular to the semiconductor substrate,
• the receding portions, on the emission facet side and on the side of the other facet in the x-direction, including an extended part surface that is a surface on a side opposite to the semiconductor substrate in the extended part, and a side face of the main part connected to the extended part surface,
• the conductive member having a length in the x-direction shorter than a length of the semiconductor structure part in the x-direction, and
• the conductive member is flush with two side faces of the semiconductor structure part opposed to each other in the y-direction.

A semiconductor laser comprising:

• a semiconductor substrate;
• a semiconductor structure part that is formed on a surface of the semiconductor substrate and includes an active layer for generating light emitted from an emission facet;
• a surface electrode formed on a surface of the semiconductor structure part opposite to the semiconductor substrate;
• and
• a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate, wherein
• the conductive member is such that part of or the whole of a side face thereof on an emission facet side, the side face being one side face in an x-direction parallel to an extending direction in which the active layer extends, is formed to be away from the emission facet in the semiconductor structure part toward a side of the other facet opposed to the emission facet in the x-direction, and
• a receding portion is formed in the conductive member such that at least part of the conductive member recedes toward the side of the other facet in the x-direction from the emission facet, the conductive member comprises:
• a main part;
• an extended part extending in the x-direction and at least partly in a y-direction on a side of the surface electrode in a side face of the emission facet side in the main part, the y-direction being perpendicular to the x-direction and a z-direction, the z-direction being perpendicular to the semiconductor substrate;
• and
• a groove passing through two side faces opposed to each other in the y-direction on a surface opposite to the semiconductor substrate or a groove extending from one side face in the y-direction toward a side of the other side face in the y-direction on the surface opposite to the semiconductor substrate,
• the receding portion including an extended part surface that is a surface on a side opposite to the semiconductor substrate in the extended part, and the side face of the main part connected to the extended part surface,
• a depth of the groove in the z-direction being equal to a depth of the receding portion in the z-direction.

A semiconductor laser comprising:

• a semiconductor substrate;
• a semiconductor structure part that is formed on a surface of the semiconductor substrate and includes an active layer for generating light emitted from an emission facet;
• a surface electrode formed on a surface of the semiconductor structure part opposite to the semiconductor substrate;
• and
• a conductive member formed on a surface of the surface electrode opposite to the semiconductor substrate, wherein
• the conductive member is such that part of or the whole of a side face thereof on an emission facet side, the side face being one side face in an x-direction parallel to an extending direction in which the active layer extends, is formed to be away from the emission facet in the semiconductor structure part toward a side of the other facet opposed to the emission facet in the x-direction,
• part of or the whole of a side face thereof on a side of the other facet in the x-direction is formed toward the emission facet side,
• a receding portion is formed on the emission facet side of the conductive member such that at least part of the conductive member recedes toward the side of the other facet in the x-direction from the emission facet, and
• a receding portion is formed on the side of the other side face of the conductive member in the x-direction such that at least part of the conductive member recedes toward the emission facet side from the other facet in the x-direction, the conductive member comprises:
• a main part;
• an extended part extending in the x-direction and at least partly in a y-direction on a side of the surface electrode in two side faces opposed to each other in the x-direction in the main part, the y-direction being perpendicular to the x-direction and a z-direction, the z-direction being perpendicular to the semiconductor substrate;
• and
• a groove passing through two side faces opposed to each other in the y-direction on a surface opposite to the semiconductor substrate or a groove extending from one side face in the y-direction toward a side of the other side face in the y-direction on the surface opposite to the semiconductor substrate,
• the receding portions, on the emission facet side and on the side of the other facet in the x-direction, including an extended part surface that is a surface on a side opposite to the semiconductor substrate in the extended part, and a side face of the main part connected to the extended part surface,
• a depth of the groove in the z-direction being equal to a depth of the receding portion in the z-direction.