Edge-emitting semiconductor laser, method of manufacturing a plurality of edge-emitting semiconductor lasers, laser component and method of manufacturing a laser component

A laser component comprising at least two edge emitting semiconductor lasers comprising:

• an epitaxial semiconductor layer stack comprising a plurality of epitaxial semiconductor layers stacked on top of each other over a substrate in a stacking direction, wherein
• the epitaxial semiconductor layer stack comprises an active zone in which electromagnetic laser radiation is generated during operation,
• the epitaxial semiconductor layer stack comprises at least one facet laterally confining the epitaxial semiconductor layer stack, and
• the facet comprises a vertical structure in the stacking direction influencing at least one vertical mode of the electromagnetic laser radiation, wherein
• the vertical structure comprises at least one recess in the stacking direction and the recess is arranged between a waveguide layer of the epitaxial semiconductor layer stack and the substrate on a side of the waveguide layer facing away from the active zone, wherein the active zone does not comprise a recess and the substrate has a protrusion with respect to the epitaxial semiconductor layer stack.