Optically pumped semiconductor laser using gallium and nitrogen containing diode laser source and module

An optically pumped solid state laser (OPSL) module, comprising:

• a submount unit having one or more raised wedge portions and a center portion, a surface of each of the raised wedge portions extending at a positive angle to a surface of the center portion, and the center portion extending from a lower portion of the raised wedge portions;
• one or more gallium and nitrogen containing pump laser diodes, each of the gallium and nitrogen containing pump laser diodes mounted on a different one of the raised wedge portions;
• a gallium and nitrogen containing gain chip arranged on the center portion, the gallium and nitrogen containing gain chip comprising a series of alternating spacer and active regions so that optical pumping from the gallium and nitrogen containing pump laser diodes generates a photonic emission from the gallium and nitrogen containing gain chip, the spacer and active regions configured to provide a desired wavelength of the photonic emission, each active region spaced from others of the active regions based on a half-wavelength metric;
• and
• one or more beam shaping optics each associated with one of the gallium and nitrogen containing pump laser diodes, wherein each of the beam shaping optics is arranged so that an emission from one of the gallium and nitrogen containing pump laser diodes mounted on one of the raised wedge portions extends through the beam shaping optic and onto an upper surface of the gallium and nitrogen containing gain chip.

An optically pumped solid state laser (OPSL) module, comprising:

• a submount unit having a plurality of raised wedge portions and a center portion, a surface of each of the raised wedge portions extending at a positive angle to a surface of the center portion, and the center portion extending from a lower portion of the raised wedge portions;
• a plurality of gallium and nitrogen containing pump laser diodes, each of the gallium and nitrogen containing pump laser diodes mounted on a different one of the raised wedge portions;
• an N×M array of gallium and nitrogen containing gain chips arranged on the center portion, each of the gallium and nitrogen containing gain chips comprising a series of alternating spacer and active regions so that optical pumping from the gallium and nitrogen containing pump laser diodes generates a photonic emission from the gallium and nitrogen containing gain chips, the spacer and active regions configured to provide a desired wavelength of the photonic emission, each active region spaced from others of the active regions based on a half-wavelength metric;
• and
• one or more beam shaping optics each associated with one of the gallium and nitrogen containing pump laser diodes, wherein each of the beam shaping optics is arranged so that an emission from one of the gallium and nitrogen containing pump laser diodes mounted on one of the raised wedge portions extends through the beam shaping optic and onto an upper surface of at least one of the gallium and nitrogen containing gain chips.