Semiconductor light-emitting element and method of manufacturing the same

A semiconductor light-emitting element comprising:

• a substrate;
• an n-type clad layer above the substrate;
• an active layer above the n-type clad layer;
• a p-type clad layer above the active layer;
• and
• a p-side guide layer between the active layer and the p-type clad layer, wherein the p-side guide layer has a refractive index higher than a refractive index of the p-type clad layer,
• wherein:
• the active layer includes:
• a well layer;
• an n-side first barrier layer on an n-type clad layer side of the well layer, wherein the n-side first barrier layer comprises a semiconductor material including a group V atom and at least one of Al, Ga, or In;
• and
• a p-side barrier layer on a p-type clad layer side of the well layer, wherein the p-side barrier layer comprises a semiconductor material including the group V atom and at least one of Al, Ga, or In,
• the p-side guide layer comprises a semiconductor material including at least one of Al, Ga, or In and the group V atom,
• an In composition ratio of the p-side barrier layer is at most 0.25,
• the p-side barrier layer comprises In,
• the n-side first barrier layer has a band gap energy smaller than a band gap energy of the p-side barrier layer,
• the p-side guide layer has a band gap energy smaller than the band gap energy of the p-side barrier layer, and
• the p-side guide layer has an In composition ratio lower than an In composition ratio of the p-side barrier layer.