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US 12,573,815 B2Granted
Semiconductor laser for preventing hole burning effect
AssigneeLumentum Japan, Inc.
InventorAtsushi Nakamura
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor laser that includes: an active layer; a grating layer including a phase shift portion with partially different grating periods; a contact layer placed above the grating layer; a highly resistive element higher in electric resistance than the contact layer; and an electrode in contact with the contact layer, and the highly resistive element is below at least a part of a portion of the electrode that overlaps with the phase shift portion.
Claims20
A semiconductor laser, comprising:
- an active layer;
- a grating layer including a phase shift portion with partially different grating periods;
- a contact layer placed above the grating layer;
- a highly resistive element higher in electric resistance than the contact layer;
- and
- an electrode in contact with the contact layer,
- the highly resistive element being placed between a portion of the electrode that overlaps with the phase shift portion and a portion of the contact layer that overlaps with the phase shift portion.
4 more elements
A method of manufacturing a semiconductor laser, the method comprising:
- forming an active layer;
- forming a grating layer including a phase shift portion with partially different grating periods;
- forming a contact layer above the grating layer;
- forming a highly resistive element higher in electric resistance than the contact layer;
- and
- forming an electrode in contact with the contact layer,
- the highly resistive element being placed between a portion of the electrode that overlaps with the phase shift portion and a portion of the contact layer that overlaps with the phase shift portion.
4 more elements
A semiconductor laser, comprising:
- an active layer;
- a grating layer including a phase shift portion with partially different grating periods;
- a contact layer placed above the grating layer;
- a highly resistive element higher in electric resistance than the contact layer;
- and
- an electrode in contact with the contact layer,
- the highly resistive element being below at least a part of a portion of the electrode that overlaps with the phase shift portion, and
- the highly resistive element being encapsulated by the electrode.
5 more elements
Dependencies are inferred from the claim text.