H01S 5/162
With window regions made by diffusion or disordening of the active layer
Official title: {with window regions made by diffusion or disordening of the active layer}
H01S5/162 (With window regions made by diffusion or disordening of the active layer) appears on 145 US grants and 149 published applications in this corpus.
Search patents in H01S- Granted patents
- 145
- Published applications
- 149
- Assignees
- 77
- Inventors
- 317
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 6 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 10 |
| 2003 | 5 | 8 |
| 2004 | 8 | 13 |
| 2005 | 5 | 8 |
| 2006 | 6 | 11 |
| 2007 | 5 | 18 |
| 2008 | 5 | 10 |
| 2009 | 16 | 11 |
| 2010 | 16 | 6 |
| 2011 | 2 | 2 |
| 2012 | 4 | 5 |
| 2013 | 5 | 2 |
| 2014 | 2 | 1 |
| 2015 | 0 | 3 |
| 2016 | 2 | 2 |
| 2017 | 1 | 2 |
| 2018 | 4 | 1 |
| 2019 | 1 | 4 |
| 2020 | 1 | 6 |
| 2021 | 5 | 4 |
| 2022 | 4 | 5 |
| 2023 | 4 | 6 |
| 2024 | 1 | 8 |
| 2025 | 3 | 1 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor laser element7 Jan 2025US 12,191,634 B2Nuvoton Technology Corporation Japan
- Semiconductor laser element, testing method, and testing device1 Oct 2024US 12,107,393 B2Nuvoton Technology Corporation Japan
- Heterogeneous lasers with facets optimized for high power3 Sep 2026US 2026/0261096 A1
- Semiconductor light-emitting element and method of manufacturing the same12 Feb 2026US 2026/0045772 A1Nuvoton Technology Corporation Japan
- Semiconductor laser device20 Nov 2025US 2025/0357730 A1Ushio Denki Kabushiki Kaisha
- Heterogeneous lasers with facets optimized for high power3 Oct 2024US 2024/0332907 A1
- Laser bar with reduced lateral far-field divergence25 Jul 2024US 2024/0250506 A1Ferdinand-Braun-Institut Ggmbh, Leibniz-Institut FüR HöChstfrequenztechnik
Most cited
By later US patents
- Semiconductor laser and method of making the same57US 6,067,310 ASumitomo Electric Industries, Ltd. · 2000
- Semiconductor light-emitting device and production method thereof51US 5,751,013 AMatsushita Electric Industrial Co., Ltd. · 1998
- Buried lateral index guided lasers and lasers with lateral current blocking layers34US 7,526,007 B2Palo Alto Research Center Incorporated · 2009
- Integrated tapered diode laser arrangement and method for producing it33US 7,885,302 B2OSRAM Opto Semiconductors GmbH · 2011
- Compound semiconductor light emitting device and method of fabricating the same32US 6,323,052 B1Mitsubishi Chemical Corporation · 2001