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US 7,526,007 B2Granted
Buried lateral index guided lasers and lasers with lateral current blocking layers
AssigneePalo Alto Research Center Incorporated
InventorsChristopher L. Chua, Michael A. Kneissl, Noble M. Johnson, Peter Kiesel
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Abstract
A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.
Claims17
A semiconductor structure to output light comprising:
- a semiconductor layer including an active region that includes at least Gallium, Arsenide and Nitride;
- and,
- a laterally adjacent region including hydrogen induced bandgap shifted semiconductor material formed alongside the active region, the bandgap shifted semiconductor material positioned to improve lateral optical confinement in the active region.
A semiconductor laser structure comprising:
- a substrate;
- a cladding layer;
- a semiconductor layer including an active region and a laterally adjacent semiconductor region including hydrogen induced bandgap shifted semiconductor material formed alongside the active region, the bandgap shifted semiconductor material positioned to improve lateral carrier confinement;
- a hydrogenated facet coupled to the active region, the hydrogen in the facet to shift a bandage of the facet;
- a second cladding layer;
- and,
- a contact to provide current to the active region.
4 more elements
Dependencies are inferred from the claim text.