Semiconductor laser element, testing method, and testing device
AssigneeNuvoton Technology Corporation Japan
InventorsKazumasa Nagano, Hiroki Nagai
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Abstract
A semiconductor laser element that includes a semiconductor layer including a waveguide formed in an intra-layer direction of the semiconductor layer and a window region formed in a front-side end face of the waveguide, has a current-laser optical output characteristic in which, at an operating temperature of 25° C.±3° C., a laser optical output has a maximum value at a first driving current value and the laser optical output is at most 20% of the maximum value at a second driving current value greater than the first driving current value, and is not damaged at the second driving current value.
Claims20
A semiconductor laser element, comprising a semiconductor layer, wherein
- the semiconductor layer includes:
- a waveguide formed in an intra-layer direction of the semiconductor layer;
- and
- a window region formed in at least a front-side end face of the waveguide among the front-side end face and a rear-side end face of the waveguide,
- the semiconductor layer includes an n-type clad layer containing n-type AlGaInP, an n-side light guiding layer, an active layer including a quantum well structure, a p-side light guiding layer, and a p-type clad layer containing p-type AlGaInP which are formed in a stated order,
- the quantum well structure includes a well layer and a barrier layer, wherein the barrier layer contains AlGaAs, and
- the p-side light guiding layer and the n-side light guiding layer each contain AlyGazIn(1-y-z)P, y being at least 0 and at most 0.1, z being at least 0 and at most 0.9, y+z being at least 0.3 and at most 0.7.
Dependencies are inferred from the claim text.