Back to results
US 5,751,013 AGranted
Semiconductor light-emitting device and production method thereof
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsIsao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Kiyoshi Ohnaka, Yuzaburo Ban, Minoru Kubo
Life of this patent
Estimating the term…
Abstract
A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
Claims11
A semiconductor light-emitting device with a double hetero structure, comprising:
- an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity;
- and first and second cladding layers provided so as to sandwich the active layer.
Dependencies are inferred from the claim text.