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US 2025/0357730 A1Published application
Semiconductor laser device
AssigneeUshio Denki Kabushiki Kaisha
InventorsShintaro MIYAMOTO, Seiji KITAMURA
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Abstract
In a semiconductor laser device, a light shielding groove is formed in an upper cladding layer so as to be adjacent to a bank in a waveguide direction. A surface of the light shielding groove is covered with an insulating layer (not illustrated), and a depth of the light shielding groove reaches an absorption layer that is either a substrate or a buffer layer formed on the substrate.
Claims10
An edge emitting type semiconductor laser device, comprising:
- a multilayer structure of a lower cladding layer, an active layer, and an upper cladding layer formed on a semiconductor substrate;
- a ridge portion formed in the upper cladding layer;
- a bank formed in the upper cladding layer so as to be adjacent to the ridge portion in a width direction;
- and
- a light shielding groove formed in the upper cladding layer so as to be adjacent to the bank in a waveguide direction.
2 more elements
Dependencies are inferred from the claim text.