Integrated tapered diode laser arrangement and method for producing it
AssigneeOSRAM Opto Semiconductors GmbH
InventorsFranz Eberhard, Thomas Schlereth, Wolfgang Schmid
Life of this patent
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Abstract
An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.
Claims29
An integrated tapered diode laser arrangement, comprising:
- an injector region;
- and
- an expanding region which is optically coupled to the injector region and expands in a cross section in a main radiation direction, the expanding region being an amplifying region;
- wherein at least one of said injector region and said expanding region comprises an active region having a plurality of semiconductor materials intermixed at least in one intermixed region;
- and
- wherein the intermixed region has a larger electronic band gap than a non-intermixed region.
An integrated optical arrangement, comprising a trapezoidal region which expands in a cross section and which is produced at least partly using a diffusion-induced intermixing process.
A method for producing an integrated tapered diode laser arrangement, the method comprising:
- forming an injector region;
- and
- forming an expanding region which is optically coupled to the injector region and expands in a cross section in a main radiation direction, the expanding region being an amplifying region;
- in which at least one of the injector region and the expanding region comprises an active structure with a plurality of semiconductor materials intermixed at least in one intermixed region in order to increase the electronic band gap.
An integrated tapered diode laser arrangement, comprising:
- an injector region;
- and
- an expanding region optically coupled to the injector region and expanding in a cross section in a main radiation direction, the expanding region being an amplifying region;
- wherein the injector region and said expanding region comprise an active region having a plurality of semiconductor materials;
- wherein the injector region comprises two injector edge regions which extend parallel to one another and in a direction from the expanding region to an end of the injector region;
- wherein the semiconductor materials are intermixed in said injector edge regions forming intermixed regions, which have a reduced refractive index compared to a non-intermixed part of the injector region.
An integrated tapered diode laser arrangement, comprising:
- an injector region;
- and
- an expanding region optically coupled to the injector region and expanding in a cross section in a main radiation direction, the expanding region being an amplifying region;
- a free propagation region arranged between the injector region and the expanding region and having reduced amplification by comparison with the expanding region;
- wherein the free propagation region is formed as an intermixed region having a larger electronic band gap than that of the expanding region and having a larger band gap than that of the injector region.
Dependencies are inferred from the claim text.