H01S 5/0201
Separation of the wafer into individual elements
Official title: {Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth}
H01S5/0201 (Separation of the wafer into individual elements) appears on 938 US grants and 923 published applications in this corpus.
Search patents in H01S- Granted patents
- 938
- Published applications
- 923
- Assignees
- 290
- Inventors
- 1,566
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 10 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 5 | 0 |
| 1992 | 6 | 0 |
| 1993 | 9 | 0 |
| 1994 | 11 | 0 |
| 1995 | 12 | 0 |
| 1996 | 6 | 0 |
| 1997 | 16 | 0 |
| 1998 | 19 | 0 |
| 1999 | 18 | 0 |
| 2000 | 19 | 0 |
| 2001 | 20 | 12 |
| 2002 | 27 | 31 |
| 2003 | 17 | 34 |
| 2004 | 37 | 29 |
| 2005 | 20 | 29 |
| 2006 | 14 | 21 |
| 2007 | 12 | 29 |
| 2008 | 16 | 48 |
| 2009 | 18 | 45 |
| 2010 | 43 | 50 |
| 2011 | 40 | 56 |
| 2012 | 46 | 39 |
| 2013 | 46 | 40 |
| 2014 | 32 | 23 |
| 2015 | 38 | 33 |
| 2016 | 36 | 28 |
| 2017 | 34 | 31 |
| 2018 | 33 | 39 |
| 2019 | 37 | 37 |
| 2020 | 44 | 52 |
| 2021 | 37 | 50 |
| 2022 | 29 | 51 |
| 2023 | 30 | 42 |
| 2024 | 35 | 42 |
| 2025 | 31 | 21 |
| 2026 | 18 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Method for producing a plurality of semiconductor lasers, and semiconductor laser8 Sep 2026US 12,731,955 B2ams-OSRAM International GmbH
- Bonding device and bonding method1 Sep 2026US 12,726,000 B2Sumitomo Electric Industries, Ltd.
- Quantum cascade element25 Aug 2026US 12,719,239 B2Kabushiki Kaisha Toshiba
- Edge-emitting laser diode, related apparatuses, data storage devices, systems, and methods24 Sep 2026US 2026/0291184 A1Seagate Technology LLC
- Method for producing a semiconductor laser and semiconductor laser13 Aug 2026US 2026/0237959 A1ams-OSRAM International GmbH
- Optical apparatus and method for manufacturing optical apparatus23 Jul 2026US 2026/0213490 A1Sony Semiconductor Solutions Corporation
- Edge-emitting semiconductor laser, method of manufacturing a plurality of edge-emitting semiconductor lasers, laser component and method of manufacturing a laser component23 Jul 2026US 2026/0213496 A1ams-OSRAM International GmbH
- Semiconductor laser element18 Jun 2026US 2026/0171749 A1Rohm Co., Ltd.
Most cited
By later US patents
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates297US 6,379,985 B1Xerox Corporation · 2002
- Semiconductor light emitting device and semiconductor laser289US 6,680,959 B2Rohm Co., Ltd. · 2004
- Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates237US 8,351,478 B2Soraa, Inc. · 2013
- Method of fabricating nitride semiconductor laser234US 7,939,354 B2Sumitomo Electric Industries, Ltd. · 2011