Method for producing a plurality of semiconductor lasers, and semiconductor laser

A method of producing a plurality of semiconductor lasers comprising:

• a) providing a substrate comprising a semiconductor layer sequence and comprising a plurality of device regions, each device region having at least one resonator region and being bounded perpendicular to the resonator region by singulation lines in a transverse direction and parallel to the resonator region by singulation lines in a longitudinal direction;
• b) forming recesses overlapping with the singulation lines in the transverse direction by a dry chemical etching process, wherein the recesses have a basic shape which is curved at least in places, wherein a radius of curvature of the recesses in the region of the resonator regions is between 10 times and 500 times a width of the resonator region;
• c) wet chemical etching of the side surfaces of the recesses to form resonator surfaces;
• and
• d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction.