H01S 5/0205
During growth of the semiconductor body
Official title: {during growth of the semiconductor body}
H01S5/0205 (During growth of the semiconductor body) appears on 25 US grants and 22 published applications in this corpus.
Search patents in H01S- Granted patents
- 25
- Published applications
- 22
- Assignees
- 21
- Inventors
- 52
- Latest grant
- 18 Jul 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 4 | 2 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 2 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 0 |
| 2015 | 1 | 1 |
| 2016 | 1 | 1 |
| 2017 | 1 | 3 |
| 2018 | 2 | 2 |
| 2019 | 1 | 2 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 2 |
| 2023 | 1 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Gallium and nitrogen bearing dies with improved usage of substrate material18 Jul 2023US 11,705,689 B2KYOCERA SLD Laser, Inc.
- Method of manufacturing semiconductor device10 May 2022US 11,329,454 B2Mitsubishi Electric Corporation
- Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material10 Aug 2021US 11,088,505 B2KYOCERA SLD Laser, Inc.
- Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material19 May 2020US 10,658,810 B2Soraa Laser Diode, Inc.
- Electron beam pumped non-c-plane UV emitters17 Sep 2019US 10,418,785 B2Palo Alto Research Center Incorporated
- Method of transferring a pattern to an epitaxial layer of a light emitting device14 Dec 2023US 2023/0402564 A1The Regents of the University of California
- Epitaxial substrate with 2d material interposer, manufacturing method, and manufacturing assembly16 Feb 2023US 2023/0046307 A1
- Layered body and manufacturing method for layered body29 Dec 2022US 2022/0415714 A1KYOCERA Corporation
- Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material6 Jan 2022US 2022/0006256 A1KYOCERA SLD Laser, Inc.
- Method of manufacturing semiconductor device29 Apr 2021US 2021/0126432 A1Mitsubishi Electric Corporation
Most cited
By later US patents
- Semiconductor devices77US 6,459,712 B2Hitachi, Ltd. · 2002
- Buried reflectors for light emitters in epitaxial material and method for producing same59US 6,046,465 AHewlett-Packard Company · 2000
- Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material54US 9,362,715 B2Soraa Laser Diode, Inc. · 2016
- Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices41US 6,377,596 B1Hitachi, Ltd. · 2002
- Fixed wavelength vertical cavity optical devices and method of manufacture therefor35US 6,953,702 B2Agilent Technologies, Inc. · 2005