Buried reflectors for light emitters in epitaxial material and method for producing same
AssigneeHewlett-Packard Company
InventorsShih-Yuan Wang, Yong Chen, Scott W. Corzine, R. Scott Kern, Carrie C. Coman, Michael R. Krames, Frederick A. Kish, Jr., Yawara Kaneko
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Abstract
A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.
Claims8
A method for forming a low defect density material having a buried reflector in a material system, comprising the steps of:
- applying a first material having a first refractive index over a substrate;
- applying a second material having a second refractive index over said first material;
- and
- growing an epitaxial lateral growth layer over said second material, said epitaxial lateral growth layer including an active region oriented substantially perpendicular to said substrate, said epitaxial lateral growth layer partially covering said second material.
A material system, comprising:
- a substrate;
- a reflective layer over said substrate;
- and
- an epitaxial lateral growth layer extending over said reflective layer, said epitaxial lateral growth layer including an active region oriented substantially perpendicular to said substrate, said epitaxial lateral growth layer partially covering said reflective layer.
Dependencies are inferred from the claim text.