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US 10,418,785 B2Granted
Electron beam pumped non-c-plane UV emitters
AssigneePalo Alto Research Center Incorporated
InventorsThomas Wunderer, Noble M. Johnson
Life of this patent
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Abstract
An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.
Claims20
A method, comprising:
- slicing a bulk AlN boule to provide a substrate having a growth surface having a non c-plane crystallographic orientation;
- epitaxially growing an epitaxial AlN layer having the non-c-plane crystallographic orientation on the growth surface;
- and
- epitaxially growing a III-N heterostructure comprising an UV emitting active region, the heterostructure having the non-c-plane crystallographic orientation on the epitaxial AlN layer, the UV emitting active region configured to emit UV radiation in response to electron beam pumping of the active region.
1 more element
A method, comprising:
- slicing a bulk AlN boule to provide a substrate having a growth surface having a non c-plane crystallographic orientation;
- epitaxially growing an epitaxial AlN layer having the non-c-plane crystallographic orientation on the growth surface;
- and
- epitaxially growing a III-N heterostructure comprising an UV emitting active region, the heterostructure having the non-c-plane crystallographic orientation on the epitaxial AlN layer, the UV emitting active region configured to emit UV radiation in response to electron beam pumping of the active region;
- and
- forming a first reflector and a second reflector, the active region disposed between the first reflector and the second reflector.
3 more elements
Dependencies are inferred from the claim text.