Semiconductor devices
AssigneeHitachi, Ltd.
InventorsToshiaki Tanaka, Shigeru Aoki
Life of this patent
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Abstract
An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insulating member (4) and the substrate (40) exposed by the opening thereby to form a semiconductor material (1, 5, 51, 52). A semiconductor material (6, 7) configured of the first semiconductor material or configured of the first semiconductor material and another semiconductor material grown on the first semiconductor material is processed thereby to form a semiconductor device.
Claims12
A semiconductor laser device comprising a light-emitting diode formed on a single-crystal substrate,
- wherein an optical waveguide structure is formed on the surface of said substrate in such a manner that multiple layered crystals are formed by epitaxial growth laterally from the ends of an insulator mask with the side of each of said ends as a base on a pattern having said insulator mask,
- said layered crystals are coalesced with each other on a central region of said insulator mask thereby to configure an optical waveguide layer composed of a single flat and smooth crystal layer of low defect density, and an optical active layer is formed on said optical waveguide layer.
Dependencies are inferred from the claim text.