Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices
AssigneeHitachi, Ltd.
InventorsToshiaki Tanaka, Shigeru Aoki
Life of this patent
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Abstract
An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insulating member (4) and the substrate (40) exposed by the opening thereby to form a semiconductor material (1, 5, 51, 52). A semiconductor material (6, 7) configured of the first semiconductor material or configured of the first semiconductor material and another semiconductor material grown on the first semiconductor material is processed thereby to form a semiconductor device.
Claims23
A semiconductor device comprising a first region made of the crystal of a compound semiconductor containing at least nitrogen as a component element and a second region made of an insulator of an amorphous structure,
- wherein at least a portion of said first region is on said second region.
A semiconductor device comprising a first region made of a compound semiconductor having a hexagonal symmetry crystal structure and a second region made of an insulator having an amorphous structure, wherein at least a portion of said first region is on said second region.
A method of fabricating a semiconductor device, comprising the step of growing laterally the crystal of a compound semiconductor containing at least nitrogen as a constituent element, grown on the insulator surface of an amorphous structure by laterally epitaxial growth, which is laterally homo-epitaxial growing on sidewalls of crystal of the compound semiconductor containing at least nitrogen.
A method of fabricating a semiconductor device, comprising the step of growing laterally the crystal having a hexagonal symmetry structure of a compound semiconductor configured of a group-III element and a group-V element on the insulator surface of an amorphous structure through homo-epitaxial growing.
A semiconductor device comprising a first region having a crystal structure, a second region made of an insulating material of an amorphous structure formed on said first region and a third region made of the crystal of a compound semiconductor containing nitrogen and formed on said second region,
- wherein at least an opening is formed in said second region, and said first region and said third region are coupled to each other in said opening.
A semiconductor device comprising a first region having a crystal structure, a second region made of an insulating material of an amorphous structure formed on said first region, and a third region made of a hexagonal crystal structure of a compound semiconductor configured of a group-III element and a group-V element and formed on said second region,
- wherein at least an opening is formed in said second region, and said first region and said third region are coupled to each other in said opening.
A semiconductor device comprising:
- an insulator of an amorphous structure;
- and
- a crystal region of a compound semiconductor containing at least nitrogen as a component element, grown laterally on the surface of said insulator by lateral homoepitaxial growing.
Dependencies are inferred from the claim text.