Edge-emitting laser diode, related apparatuses, data storage devices, systems, and methods

A wafer comprising:

• a substrate;
• and
• a plurality of edge-emitting laser diode intermediates, wherein each edge-emitting laser diode intermediate comprises a body, wherein the body comprises:
• a base;
• and
• a ridge waveguide disposed adjacent to the base, wherein the ridge waveguide
• comprises an active region;
• a first etched facet;
• a second etched facet, wherein the active region is disposed between the
• first etched facet and the second etched facet, wherein the ridge waveguide is configured to confine light generated in the active region and direct light toward the second etched facet;
• a p-metal electrical contact;
• and
• an n-metal electrical contact, wherein at least the first etched facet and the
• second etched facet are encapsulated in a dielectric encapsulation material such that the p-metal electrical contact and the n-metal electrical contact extend from the body through the dielectric encapsulation material so that each of the p-metal electrical contact and the n-metal electrical contact are exposed for electrical connection, and wherein the edge-emitting laser diode is configured to be mounted to an external surface of a component of an apparatus to communicate light from the second etched facet of the edge-emitting laser diode to a waveguide in the apparatus.

A bar comprising:

• a substrate;
• and
• a single row of a plurality of edge-emitting laser diode intermediates, wherein each edge-emitting laser diode intermediate comprises a body, wherein the body comprises:
• a base;
• and
• a ridge waveguide disposed adjacent to the base, wherein the ridge waveguide
• comprises an active region;
• a first etched facet;
• a second etched facet, wherein the active region is disposed between the
• first etched facet and the second etched facet, wherein the ridge waveguide is configured to confine light generated in the active region and direct light toward the second etched facet;
• a p-metal electrical contact;
• and
• an n-metal electrical contact, wherein at least the first etched facet and the
• second etched facet are encapsulated in a dielectric encapsulation material such that the p-metal electrical contact and the n-metal electrical contact extend from the body through the dielectric encapsulation material so that each of the p-metal electrical contact and the n-metal electrical contact are exposed for electrical connection, and wherein the edge-emitting laser diode is configured to be mounted to an external surface of a component of an apparatus to communicate light from the second etched facet of the edge-emitting laser diode to a waveguide in the apparatus.