Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates
AssigneeXerox Corporation
InventorsTanya J. Cervantes, Linda T. Romano, Michael A. Kneissl
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Abstract
Methods for cleaving semiconductor structures formed on c-face sapphire substrates are disclosed. An exemplary method includes forming at least one III-V nitride layer on the top c-face of a c-face sapphire substrate. A line of weakness is formed on the bottom c-face of the c-face sapphire substrate in the a-plane direction of the c-face sapphire substrate. A force is applied to the bottom c-face to cleave the c-face sapphire substrate along the line of weakness in the a-plane direction, and to form a cleaved facet along an m-plane of each III-V nitride layer. The III-V nitride layers can be included in laser diodes and other light-emitting devices.
Claims11
A method for cleaving at least one III-V nitride layer of a semiconductor structure formed on a c-face sapphire substrate, comprising:
- forming a semiconductor structure comprising at least one III-V nitride layer on a top c-face of a c-face sapphire substrate, the c-face sapphire substrate including a bottom c-face and an edge between the top c-face and bottom c-face;
- forming a line of weakness on the bottom c-face of the c-face sapphire substrate along at least substantially the length of a line that (i) extends in an a-plane direction of the c-face sapphire substrate and (ii) extends from one portion of the edge of the c-face sapphire substrate to another portion of the edge;
- and
- applying a force to the bottom c-face of the c-face sapphire substrate to cleave the c-face sapphire substrate along the line of weakness in the a-plane direction and to form a cleaved facet along an m-plane of the at least one III-V nitride layer.
Dependencies are inferred from the claim text.