H01S 2304/00
Special growth methods for semiconductor lasers
H01S2304/00 (Special growth methods for semiconductor lasers) appears on 1,041 US grants and 1,097 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,041
- Published applications
- 1,097
- Assignees
- 301
- Inventors
- 1,723
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 11 | 0 |
| 1995 | 9 | 0 |
| 1996 | 19 | 0 |
| 1997 | 9 | 0 |
| 1998 | 27 | 0 |
| 1999 | 16 | 0 |
| 2000 | 15 | 0 |
| 2001 | 26 | 18 |
| 2002 | 22 | 38 |
| 2003 | 37 | 47 |
| 2004 | 45 | 55 |
| 2005 | 52 | 96 |
| 2006 | 43 | 56 |
| 2007 | 37 | 64 |
| 2008 | 41 | 74 |
| 2009 | 49 | 64 |
| 2010 | 76 | 58 |
| 2011 | 54 | 47 |
| 2012 | 48 | 50 |
| 2013 | 32 | 35 |
| 2014 | 35 | 18 |
| 2015 | 36 | 23 |
| 2016 | 28 | 21 |
| 2017 | 22 | 28 |
| 2018 | 28 | 37 |
| 2019 | 37 | 45 |
| 2020 | 41 | 44 |
| 2021 | 31 | 39 |
| 2022 | 25 | 36 |
| 2023 | 15 | 34 |
| 2024 | 27 | 29 |
| 2025 | 21 | 28 |
| 2026 | 15 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- External-cavity-free low-threshold perovskite laser device and application thereof29 Sep 2026US 12,749,874 B2Zhejiang University
- Stacked gratings for optical emitters21 Jul 2026US 12,689,183 B2Lumentum Operations LLC
- Opto-electronic device16 Jun 2026US 12,658,677 B2Nokia Solutions and Networks Oy
- Method for producing nitride crystal and nitride crystal2 Jun 2026US 12,644,201 B2Mitsubishi Chemical Corporation
- Semiconductor laser element, semiconductor laser device, semiconductor laser device manufacturing method, and gas analysis device26 May 2026US 12,640,538 B2Horiba, Ltd.
- Zero thickness planarization of overgrown semiconductor structures17 Sep 2026US 2026/0280230 A1
- Surface emitting laser, method for fabricating surface emitting laser20 Aug 2026US 2026/0246239 A1Sanoh Industrial Co., Ltd.
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
- Surface-emitting laser and surface-emitting laser array6 Aug 2026US 2026/0229847 A1Sony Group Corporation
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Semiconductor light emitting device and semiconductor laser289US 6,680,959 B2Rohm Co., Ltd. · 2004
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003