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US 2026/0280230 A1Published application
Zero thickness planarization of overgrown semiconductor structures
OwnerBernard Paquetteinventor
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Abstract
A bottom grating semiconductor device, such as a DFB laser, and method of fabricating a bottom grating semiconductor device for increasing Kappa value, comprising overgrowing a planarization layer on a grating layer of the semiconductor device, wherein the grating layer includes a plurality of Bragg gratings, etching back the planarization layer to a desired thickness over the grating layer, and growing an active layer on the etched back planarization layer.
Claims20
A method for increasing Kappa value in a bottom grating semiconductor device, comprising:
- overgrowing a planarization layer on a grating layer of the semiconductor device, wherein the grating layer includes a plurality of Bragg gratings;
- etching back the planarization layer to a desired thickness over the grating layer;
- and
- growing an active layer on the etched back planarization layer.
1 more element
A bottom grating semiconductor device having high Kappa value, comprising:
- a grating layer having a plurality of Bragg gratings;
- a planarization layer overgrown on said grating layer and etched back to a desired thickness over the grating layer;
- and
- an active layer grown on the etched back planarization layer.
1 more element
Dependencies are inferred from the claim text.