H01S 2304/06
Lpe
H01S2304/06 (Lpe) appears on 14 US grants and 6 published applications in this corpus.
Search patents in H01S- Granted patents
- 14
- Published applications
- 6
- Assignees
- 10
- Inventors
- 31
- Latest grant
- 29 Oct 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 2 | 2 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 2 |
| 2018 | 0 | 0 |
| 2019 | 3 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Substrate technology for quantum dot lasers integrated on silicon29 Oct 2019US 10,461,495 B2Cisco Technology, Inc.
- Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal23 Apr 2019US 10,266,965 B2Itochu Plastics Inc.
- Process for producing group III nitride crystal and apparatus for producing group III nitride crystal12 Feb 2019US 10,202,710 B2Itochu Plastics Inc.
- Semiconductor laser device and manufacturing method therefor8 Mar 2005US 6,865,206 B2Sharp Kabushiki Kaisha
- III-nitride optoelectronic device12 Aug 2003US 6,605,485 B2MP Technologies, LLC
- Substrate technology for quantum dot lasers integrated on silicon5 Sep 2019US 2019/0273361 A1Cisco Technology, Inc.
- Method for producing group-iii nitride crystal, group-iii nitride crystal, semiconductor device, and device for producing group-iii nitride crystal16 Mar 2017US 2017/0073839 A1Itochu Plastics Inc.
- Process for producing group iii nitride crystal and apparatus for producing group iii nitride crystal16 Mar 2017US 2017/0073840 A1Itochu Plastics Inc.
- III-V semiconductors separate confinement superlattice optoelectronic devices9 Jan 2003US 2003/0005880 A1
- Semiconductor laser device and manufacturing method therefor2 Jan 2003US 2003/0002553 A1Sharp Kabushiki Kaisha
Most cited
By later US patents
- Semiconductor device25US 4,961,198 AMatsushita Electric Industrial Co., Ltd. · 1990
- Method of manufacturing a laser diode10US 5,441,912 AFurukawa Electric Co., Ltd. · 1995
- Multi quantum well grinsch detector9US 6,459,096 B12002
- High power diode type laser devices4US 6,272,161 B12001
- III-V semiconductors separate confinement superlattice optoelectronic devices3US 6,570,179 B1MP Technologies, LLC · 2003