III-nitride optoelectronic device
AssigneeMP Technologies, LLC
InventorManijeh Razeghi
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Abstract
A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.
Claims13
A method of forming a multi-quantum well laser diode comprising the successive steps of:
- a) growing a buffer layer on a cleaned substrate;
- b) growing a lower confinement layer on the buffer layer;
- c) doping the lower confinement layer with a n-type dopant;
- d) growing an active layer by growing, in sequence, successive layers of GaInN/GaN;
- e) repeating step (d) until from about 5 to about 30 period GRINSCH structure is formed comprising a plurality of layers of GaxIN1−xN/GaN(0≦x≦1);
- f) growing an upper confinement layer on the active layer;
- g) doping the upper confinement layer with a p-type dopant;
- annealing and forming contacts on the upper and lower confinement layers.
A method of forming a multi-quantum well laser diode comprising the successive steps of:
- a) growing a buffer layer on GaN on a cleaned substrate;
- b) growing a lower confinement layer of GaN:
- Si on the buffer layer;
- c) growing an active layer by growing, in sequence, a GRINSCH structure having successive layers of GaxIn1−xN/GaN (1≧x≧0);
- d) repeating step (c) until from about 10 to about 15 layers are formed of GaxIn1−xN/GaN (0→1);
- e) growing an upper confinement layer of GaNi:Mg on the active layer;
- f) annealing and forming contacts on the upper and lower confinement layers.
Dependencies are inferred from the claim text.