Method of manufacturing a laser diode

Abstract

This invention provides a method of manufacturing laser diodes having a high efficiency and a high optical output and showing an excellent temperature-dependent performance at a high yield. The method comprises steps of forming a mesa on a p-type compound semiconductor substrate 1 by sequentially arranging at least a p-type compound semiconductor cladding layer 2, an active layer 3 and an n-type compound semiconductor compound layer 4, burying the lateral sides of said mesa with a p-type compound semiconductor buried layer 6 and an n-type compound semiconductor current blocking layer 7, removing said n-type compound semiconductor current blocking layer 7 partly at areas contacting each of the lateral sides of said mesa to partly expose the p-type compound semiconductor buried layer 6 in the vicinity of said mesa and then burying the remaining space with a p-type compound semiconductor current blocking layer 8.

Dependencies are inferred from the claim text.