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US 10,461,495 B2Granted
Substrate technology for quantum dot lasers integrated on silicon
AssigneeCisco Technology, Inc.
InventorsDominic F. Siriani, Sean P. Anderson, Vipulkumar Patel
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Abstract
A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.
Claims20
A method of creating an optically active element, comprising:
- bonding a III-V semiconductor material with a silicon substrate;
- removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate;
- and
- after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.
1 more element
A laser, comprising:
- a silicon substrate having an upper surface;
- a base layer bonded with the upper surface of the silicon substrate, the base layer comprising a III-V semiconductor material;
- and
- one or more layers grown on the base layer, the one or more layers comprising a quantum dot layer;
- a matrix layer, grown from the base layer, comprising a lattice-matched III-V semiconductor material to the III-V semiconductor material;
- a quantum dot layer, grown within the matrix layer;
- and
- a contact layer, grown from the matrix layer, comprising the III-V semiconductor material, wherein the contact layer is separated from the base layer by the matrix layer.
5 more elements
A laser, comprising:
- a quantum dot layer positioned with a predefined height above an upper surface of a silicon substrate;
- a base layer of a III-V semiconductor material, the base layer bonded with the upper surface of the silicon substrate;
- and
- a cladding layer of a lattice-matched III-V semiconductor material that is grown from the base layer, wherein the quantum dot layer is included in a waveguide of the cladding layer.
1 more element
Dependencies are inferred from the claim text.