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US 6,459,096 B1Granted
Multi quantum well grinsch detector
OwnerManijeh Razeghiinventor
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Abstract
A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.
Claims17
A multi-quantum well laser diode comprising:
- a substrate, a buffer layer, a lower confinement layer, an active layer and an upper confinement layer;
- said upper confinement layer being doped with a p-dopant,
- said lower confinement layer being doped with a n-dopant;
- and
- said active layer being about 5 to about 30 period GRINSCH structure comprising a plurality of layers of GaxIn1−xN/GaN (0≦×≦1).
2 more elements
A multi-quantum well laser diode comprising:
- a substrate, a buffer layer of GaN, a lower confinement layer of GaN:Si, an active layer and an upper confinement layer GaN:Mg;
- said active layer being an about 10 to about 20 period multiple quantum well GRINSCH structure comprising a plurality of layers of GaxIn1−xN/GaN (X=0→1).
Dependencies are inferred from the claim text.