III-V semiconductors separate confinement superlattice optoelectronic devices
AssigneeMP Technologies, LLC
InventorManijeh Razeghi
Life of this patent
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Abstract
A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.
Claims31
A semiconductor device comprising a substrate, a first confinement layer, a first waveguide layer, an active layer, a second confinement layer and a second waveguide layer, each of said layers formed solely of binary III-V compounds, each of said first and second waveguide layers and said active layer being a super lattice structure with at least two alternating III-V compounds.
A method of preparing a semiconductor device comprising growing, in sequence a substrate, a first confinement layer, a first waveguide layer, an active layer, a second confinement layer and a second waveguide layer, and growing each of said waveguide and active layers solely of binary III-V compounds and in a superlattice structure.
A semiconductor device comprising a substrate, a first confinement layer, a first waveguide layer, an active layer, a second confinement layer and a second waveguide layer, each of said layers formed solely of binary III-V compounds of the formula AxB1−xCyD1−y(x, y≦1), a lattice parameter of each of said first and second confinement layer, said first and second waveguide layer and said active layer being matched through the use of the formula a0=xyaAC+x(1−y)aAD+(1−x) yaAC+(1−x)(1−y)aBD.
A semiconductor device comprising a substrate, a first confinement layer, a first waveguide layer, an active layer, a second confinement layer and a second waveguide layer, each of said layers formed solely of binary III-V compounds of the formula AxB1−xCyD1−y (x, y≦1), the energy gap of said first and second confinement layer, said first and second waveguide layer and said active layer being matched through the use of the formula
- Eg=xyEAC+x(1−y)EAD+(1−x)yEBC+(1−x)(1−y)EBD.
Dependencies are inferred from the claim text.